R SCHOTTKY BARRIER DIODE
HBR30100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
30(2×15)A
100 V 175 ℃ 0.75V...
R
SCHOTTKY BARRIER DIODE
HBR30100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
30(2×15)A
100 V 175 ℃ 0.75V (@Tj=125℃)
z z
APPLICATIONS
z High frequency switch power supply
z Free wheeling diodes, polarity protection applications
TO-22O
z z, z z, z(RoHS)
FEATURES
zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction
Temperature zGuard ring for overvoltage
protection,High reliability zRoHS product
TO-22OHF
TO-22OF TO-3PB
ORDER MESSAGE
Order codes
Marking
Package
HBR30100Z
HBR30100 TO-220
HBR30100ZR
HBR30100 TO-220
HBR30100F
HBR30100 TO-220F
HBR30100FR
HBR30100 TO-220F
HBR30100HF
HBR30100 TO-220HF
HBR30100HFR HBR30100 TO-220HF
HBR30100AB
HBR30100 TO-3PB
HBR30100ABR HBR30100 TO-3PB
Halogen Free NO YES NO YES NO YES NO YES
Packaging Tube Tube Tube Tube Tube Tube Tube Tube
Device Weight 1.98 g(typ) 1.98 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 5.20 g(typ) 5.20 g(typ)
(Rev.):201002G
1/8
R
ABSOLUTE RATINGS (Tc=25℃)
Parameter Repetitive peak reverse voltage
Symbol VRRM
Maximum DC blocking voltage
VDC
Average forward current
TC=150℃ (TO-220 TO-3PB ) TC=125℃ (TO-220F TO-220HF)
per device
per diode
IF(AV)
Surge non repetitive forward current ( 8.3ms — JEDEC ) 8.3 ms single half-sine-wave (JEDEC Method)
IFSM
Maximum junction temperature
Tj
Storage temperature range
TSTG
HBR30100
Value
100
Unit
V
100 V
30 A
15
275 A
175 -40~+150
℃ ℃
...