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HBR30100

Jilin Sino

SCHOTTKY BARRIER DIODE

R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30(2×15)A 100 V 175 ℃ 0.75V...


Jilin Sino

HBR30100

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R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30(2×15)A 100 V 175 ℃ 0.75V (@Tj=125℃) z z APPLICATIONS z High frequency switch power supply z Free wheeling diodes, polarity protection applications TO-22O z z, z z, z(RoHS) FEATURES zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction Temperature zGuard ring for overvoltage protection,High reliability zRoHS product TO-22OHF TO-22OF TO-3PB ORDER MESSAGE Order codes Marking Package HBR30100Z HBR30100 TO-220 HBR30100ZR HBR30100 TO-220 HBR30100F HBR30100 TO-220F HBR30100FR HBR30100 TO-220F HBR30100HF HBR30100 TO-220HF HBR30100HFR HBR30100 TO-220HF HBR30100AB HBR30100 TO-3PB HBR30100ABR HBR30100 TO-3PB Halogen Free NO YES NO YES NO YES NO YES Packaging Tube Tube Tube Tube Tube Tube Tube Tube Device Weight 1.98 g(typ) 1.98 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 5.20 g(typ) 5.20 g(typ) (Rev.):201002G 1/8 R ABSOLUTE RATINGS (Tc=25℃) Parameter Repetitive peak reverse voltage Symbol VRRM Maximum DC blocking voltage VDC Average forward current TC=150℃ (TO-220 TO-3PB ) TC=125℃ (TO-220F TO-220HF) per device per diode IF(AV) Surge non repetitive forward current ( 8.3ms — JEDEC ) 8.3 ms single half-sine-wave (JEDEC Method) IFSM Maximum junction temperature Tj Storage temperature range TSTG HBR30100 Value 100 Unit V 100 V 30 A 15 275 A 175 -40~+150 ℃ ℃ ...




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