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HBR20150F

Jilin Sino

SCHOTTKY BARRIER DIODE

R SCHOTTKY BARRIER DIODE HBR20150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20(2×10)A 150 V 175 ℃ 0.75V...


Jilin Sino

HBR20150F

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R SCHOTTKY BARRIER DIODE HBR20150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20(2×10)A 150 V 175 ℃ 0.75V (@Tj=125℃) z z APPLICATIONS z High frequency switch power supply z Free wheeling diodes, polarity protection applications TO-22O z z, z z, z(RoHS) FEATURES zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction Temperature zGuard ring for overvoltage protection,High reliability zRoHS product TO-22OHF TO-22OF ORDER MESSAGE Order codes Marking Package HBR20150Z HBR20150 TO-220 HBR20150ZR HBR20150 TO-220 HBR20150F HBR20150 TO-220F HBR20150FR HBR20150 TO-220F HBR20150HF HBR20150 TO-220HF HBR20150HFR HBR20150 TO-220HF Halogen Free NO YES NO YES NO YES Packaging Tube Tube Tube Tube Tube Tube Device Weight 1.98 g(typ) 1.98 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) (Rev.):201104J 1/7 R ABSOLUTE RATINGS (Tc=25℃) Parameter Repetitive peak reverse voltage Symbol VRRM Maximum DC blocking voltage VDC Average forward current TC=150℃ (TO-220) TC=125℃ (TO-220F TO-220HF) per device per diode IF(AV) Surge non repetitive forward current ( 8.3ms — JEDEC ) 8.3 ms single half-sine-wave (JEDEC Method) IFSM Maximum junction temperature Tj Storage temperature range TSTG HBR20150 Value 150 Unit V 150 V 20 A 10 200 A 175 -40~+150 ℃ ℃ ELECTRICAL CHARACTERISTICS Parameter IR Tests conditions Tj =25℃ Tj =125℃ VR=VRRM Value(min) Value(typ)...




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