Document
DSI 45
Rectifier Diode
VRSM V
900 1300 1700
VRRM V
800 1200 1600
Type
DSI 45-08A DSI 45-12A DSI 45-16A DSI 45-16AR
VRRM = 800-1600 V IF(AV)M = 48 A
TO-247 AD
ISOPLUS 247TM
A C Version A Version AR
C A C (TAB)
A = Anode, C = Cathode
C A
TAB
Symbol IF(AV)M IFSM
I2t
TVJ TVJM Tstg Md * VISOL **
Conditions
TC = 105°C; 180° sine
TVJ = 45°C; VR = 0 V;
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
TVJ = 150°C; VR = 0 V;
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
TVJ = 45°C; VR = 0 V;
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
TVJ = 150°C; VR = 0 V;
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
mounting torque 50/60 Hz, RMS, t = 1 minute, leads-to-tab
Weight
typical
* Verson A only; ** Version AR only
Maximum Ratings
48 A
475 A 520 A
380 A 420 A
1120 1120
A2s A2s
720 A2s 720 A2s
-40...+150 150
-40...+150
°C °C °C
0.8...1.2
Nm
2500
V~
6g
Features
• International standard package • Planar glassivated chips • Version AR isolated and
UL registered E153432 • Epoxy meets UL 94V-0
Applications
• Supplies for DC power equipment • DC supply for PWM inverter • Field supply for DC motors • Battery DC power supplies
Advantages
• Space and weight savings • Simple mounting • Improved temperature and power cycling • Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
Symbol
Conditions
IR TVJ = TVJM; VR = VRRM
VF IF = 40 A; TVJ = 25°C
VT0 For power-loss calculations only rT TVJ = TVJM
RthJC RthCH
DC current typical
Data according to IEC 60747
Characteristic Values
≤ 3 mA
≤ 1.18
V
0.8 V 8 mΩ
0.55 K/W 0.2 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640 D* 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031
N 2.2 2.59 0.087 0.102
* ISOPLUS 247 TM without hole
420
1-2
DSI 45
70 A 60
IF 50
40
TVJ=150°C TVJ= 25°C
500 50Hz, 80% VRRM
A
IFSM400
TVJ = 45°C 300
30 200
20 TVJ = 150°C
100 10
0 0.0 0.4 0.8 1.2 V 1.6
VF
Fig. 1 Forward current versus voltage drop per diode
100
W
80 Ptot
60
0 0.001
0.01
0.1 s t
Fig. 2 Surge overload current
1
RthHA :
0.5 K/W 1.0 K/W 1.5K/W 2.0 K/W 3.0 K/W 4.0 K/W 6.0 K/W
40
104 A2s VR = 0 V I2t
TVJ = 45°C 103
TVJ = 150°C
102 1
2 3 4 5 6 7 8ms910 t
Fig. 3 I2t versus time per diode
50 A 40 IF(AV)M 30
20
20 10
0
0 10 20 30 40 A 0 20 40 60 80 100 120 140 °C
Id(AV)M
Tamb
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180°
0.6
0 0 20 40 60 80 100 120 140 °C TC
Fig. 5 Max. forward current versus case temperature
K/W ZthJC
0.4
0.2
0.0 0.001
0.01
0.1
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
Constants for ZthJC calculation:
i
1
2
3
DSI45
4
1 s 10 t
Rthi (K/W)
0.1633 0.2517 0.0933 0.04167
ti (s)
0.016 0.118 0.588 2.6
420
2-2
.