B1105

SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC durrent gain ·Complement to type 2SD1605 APPLICATIONS ·Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Product Specification 2SB1105 Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC PC Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector power dissipation Junction temperature Storage temperature Open emitter Open base Open collector TC=25 VALUE -120 -120 -7 -3 30 150 -55~150 UNIT V V V A W SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-25mA, RBE=< V(BR)EBO Emitter-base breakdown voltage IE=-50mA, IC=0 VCEsat-1 Collector-emitter saturation voltage IC=-1.5A ,IB=-3mA VCEsat-2 Collector-emitter saturation voltage IC=-3A ,IB=-30mA VBEsat-1 Base-emitter saturation voltage IC=-1.5A ,IB=-3mA VBEsat-2 Base-emitter saturation voltage IC=-3A ,IB=-30mA ICBO Collector cut-off current VCB=-120V, IE=0 ICEO Collector cut-off current VCE=-100V, RBE=< hFE DC current gain IC=-1.5A ; VCE=-3V VD Diode forward voltage ID=-3A Product Specification 2SB1105 MIN TYP. MAX UNIT -120 V -7 V -1.5 V -3.0 V -2.0...