LRB751S-40T1

LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features (1)Small surface mounting type SC-76/SOd323 (2)Low reverse current and low forward voltage. (3)High reliability Construction silicon epitaxial planar LRB751S-40T1 SC-79/SOD-523 MAXIMUM RATINGS (TA = 25°C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VRM VR IO IFSM Tj Tstg Limits 40 30 30 200 125 -40~+125 Unit V V mA mA °C °C 1 CATHODE DEVICE MARKING LRB751S-40T1= 5 ELECTRICAL CHARACTERISTICS(TA= 25°C) Parameter Symbol Min. Forward voltage VF - Reverse current IR - Capacitance between terminals C - T Typ Max. Unit - 0.37 V - 0.5 µA 2.0 - pF Conditions IF=1mA VR=30V V =1V,f=1MHz R 2 ANODE LRB751S-40T1–1/3 FORWARD CURRENT : IF (A) Ta = 125 oC LESHAN RADIO COMPANY, LTD. Electrical characteristic curves(TA = 25°C) LRB751S-40T1 1000m 100m  Typ. pulse measurement 10m 1m 100 10 Ta = 75oC Ta = 25oC Ta = -25oC 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE : VF (V) Fig. 1 Forward characteristics  100 10 Ta = 125oC Ta = 75oC  REVERSE CURRENT : IR (A) 1 100n Ta = 25oC 10n Ta = -25oC Typ. pulse measurement 1n 0 5 10 15 20 25 30 35 REVERSE VOLTAGE : VR (V) Fig. 2 Reverse characteristics  100 50 Ta = 25oC f = 1MHz CAPACITANCE BETWEEN TERMINALS : CT (pF) 20 10 5 2 1 0 2 4 6 8 10 12 14 REVERSE VOLTAGE : VR (V) Fig. 3 Capacitance between terminals characteristics LRB751S-40T1–2/3 ...