LMDL301T1G

LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diode These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are available in a Surface Mount package. Extremely Low Minority Carrier Lifetime – 15 ps (Typ) Very Low Capacitance – 1.5 pF (Max) @ V R = 15 V Low Reverse Leakage – I R = 13 nAdc (Typ) Device Marking: 4T We declare that the material of product compliance with RoHS requirements. 1 CATHODE 2 ANODE MAXIMUM RATINGS ( T J =125°C unless otherwise noted ) Symbol Rating V R Reverse Voltage Value 30 LMDL301T1G 30 VOLTS SILICON HOT–CARRIER DETECTOR AND SWITCHING DIODES 1 2 PLASTIC SOD– 323 CASE 477 Unit Volts THERMAL CHARACTERISTICS Symbol PD R θJA T J , T stg Characteristic Total Device Dissipation FR–5 Board,* T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range *FR–5 Minimum Pad Max 200 1.57 635 –55 to+150 ORDERING INFORMATION Device LMDL301T1G Marking 4T LMDL301T3G 4T Shipping 3000 / Tape & Reel 10000 / Tape & Reel Unit mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Diode Capacitance (V R = 15 V, f = 1.0MHz) Figure 1 Reverse Lea...