LBAT54SLT1G

LESHAN RADIO COMPANY, LTD. Dual Series Schottky Barrier Diodes LBAT54SLT1G These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Extremely Fast Switching Speed Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking LBAT54SLT1G LD3 Shipping 3000/Tape&Reel LBAT54SLT3G LD3 10000/Tape&Reel 3 1 2 SOT-23 (TO-236AB) ANODE 1 CATHODE 2 3 CATHODE/ANODE MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Symbol Reverse Voltage VR Forward Power Dissipation @ TA = 25°C Derate above 25°C PD Forward Current (DC) IF Junction Temperature Storage Temperature Range TJ Tstg Value 30 225 1.8 200 Max 125 Max – 55 to +150 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) V(BR)R CT IR 30 — — Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) VF — VF — Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 VF — trr — Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) VF — VF — For...