LBAT54SWT1G

LESHAN RADIO COMPANY, LTD. Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Extremely Fast Switching Speed Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device LBAT54SWT1G LBAT54SWT3G Marking B8 B8 Shipping 3000/Tape & Reel 10000/Tape & Reel LBAT54SWT1G 3 1 2 SOT–323 (SC–70) ANODE 1 CATHODE 2 3 CATHODE/ANODE DEVICE MARKING LBAT54SWT1G= B8 MAXIMUM RATINGS (T J = 125°C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ T A = 25°C Derate above 25°C Forward Current(DC) Junction Temperature Storage Temperature Range Symbol VR PF IF TJ T stg Value 30 Unit Volts 200 1.6 200Max 125Max –55 to +150 mW mW/°C mA °C °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Total Capacitance (V R = 1.0 V, f = 1.0 MHz) Reverse Leakage (V R = 25 V) Forward Voltage (I F = 0.1 mAdc) Forward Voltage (I F = 30 mAdc) Forward Voltage (I F = 100 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1) Forward Voltage (I F = 1.0 mAdc) Forward Voltage (I F = 10 mAdc) Forward Current (DC) Repe...