LBAS16HT1

LESHAN RADIO COMPANY, LTD. Switching Diode FEATURE ƽSmall plastic SMD package. ƽContinuous reverse voltage: max. 75 V. ƽHigh-speed switching in hybrid thick and thin-film circuits. ƽPb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device LBAS16HT1 LBAS16HT1G Marking A6 A6 (Pb-Free) Shipping 3000/Tape&Reel 3000/Tape&Reel MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF I FM(surge) Value 75 200 500 THERMAL CHARACTERISTICS Characteristic Symbol Max Total Device Dissipation FR-5 Board,* TA = 25°C Derate above 25°C P D 200 1.57 Thermal Resistance Junction to Ambient Junction and Storage Temperature **FR-4 Minimum Pad R θJA T J , T stg 635 150 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Reverse Voltage Leakage Current (V R = 75 Vdc) (V R = 75 Vdc, T J = 150°C) (V R = 25 Vdc, T J = 150°C) Reverse Breakdown Voltage (I BR = 100 µAdc) IR V (BR) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Diode Capacitance (V R = 0, f = 1.0 MHz) VF CD Forward Recovery Voltage (I F = 10 mAdc, t r = 20 ns) Reverse Recovery Time (I F = I R = 10 mAdc, R L = 50 Ω) Stored Charge (I F = 10 mAdc to V R = 5.0 Vdc, R L = 500 Ω) V FR t rr QS LBAS16HT1 1 2 SOD -323 Unit Vdc mAdc mAdc 1 CATHODE Unit mW mW/°C °C/W °C Min — — — 75 — — — — — — — — Max Unit µAdc 1.0 50 30 — Vdc 715 855 1000 1250 2.0 1.75 ...