LBAS16WT1G

LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS (TA = 25oC) Rating Symbol Max Continuous Reverse Voltage VR 75 Recurrent Peak Forward Current IR 200 Peak Forward Surge Current Pulse Width = 10 µs IFM(surge) 500 Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) PD 200 1.6 Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) RθJA 0.625 DEVICE MARKING LBAS16WT1G= A6 Unit V mA mA mW mW/°C °C Unit °C/mW ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mA, RL = 50 Ω) (Figure 1) Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 Ω) (Figure 2) Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3) Symbol VF IR CD trr QS VFR LBAS16WT1G S-LBAS16WT1G 3 1 2 SC-70 3 CATHODE 1 ANODE Min Max Unit mV — 715 — 855 — 1000 — 1250 µA — ...