Switching Diode
LESHAN RADIO COMPANY, LTD.
Silicon Switching Diode
FEATURE
z We declare that the material of product compliance with R...
Description
LESHAN RADIO COMPANY, LTD.
Silicon Switching Diode
FEATURE
z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable.
MAXIMUM RATINGS (TA = 25oC)
Rating
Symbol
Max
Continuous Reverse Voltage
VR 75
Recurrent Peak Forward Current
IR 200
Peak Forward Surge Current Pulse Width = 10 µs
IFM(surge)
500
Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
PD
200 1.6
Operating and Storage Junction Temperature Range
TJ, Tstg
–55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm)
RθJA
0.625
DEVICE MARKING
LBAS16WT1G= A6
Unit V mA mA
mW mW/°C
°C
Unit °C/mW
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA)
Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C)
Capacitance (VR = 0, f = 1.0 MHz)
Reverse Recovery Time (IF = IR = 10 mA, RL = 50 Ω) (Figure 1)
Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 Ω) (Figure 2)
Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3)
Symbol VF
IR
CD trr QS VFR
LBAS16WT1G S-LBAS16WT1G
3
1 2
SC-70
3 CATHODE
1 ANODE
Min Max Unit
mV — 715 — 855 — 1000 — 1250
µA — ...
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