LBAS40LT3G

LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS40LT1G Features Low forward current Guard ring protected Low diode capacitance. APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. Blocking diodes. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection. We declare that the material of product compliance with RoHS requirements. Series 3 1 2 SOT- 23 13 Anode Cathode BAS40 single diode. 3 Cathode/Anode ORDERING INFORMATION Device LBAS40LT1G LBAS40LT3G LBAS40-04LT1G LBAS40-04LT3G LBAS40-05LT1G LBAS40-05LT3G LBAS40-06LT1G LBAS40-06LT3G Marking B1 B1 CB CB 455 455 L2 L2 Shipping 3000 Tape & Reel 10000 Tape & Reel 3000 Tape & Reel 10000 Tape & Reel 3000 Tape & Reel 10000 Tape & Reel 3000 Tape & Reel 10000 Tape & Reel 1 Anode 2 Cathode BAS40-04 double diode. 3 Cathode 1 Anode 2 Anode BAS40-05 double diode. 3 Anode 1 Cathode 2 Cathode BAS40-06 double diode. Rev.O 1/4 LESHAN RADIO COMPANY, LTD. LBAS40LT1G Series MAXIMUM RATINGS (TA = 25°C) Parameter Continuous reverse voltage Continuous forward current Repetitive Peak forward surge current Non-repetitive peak forward current Storage temperature Junction temperature Operating ambient temperature Symbol VR IF IFSM IFSM Tstg Tj Tamb Min. -65 -65 Max. 40 120 120 200 +150 150 +150 Unit V mA mA mA °C °C °C Conditions tp<1s;δ<0.5 tp<10ms DEVICE MARKING LBAS40LT1G=B1 LBAS40-04LT1G=CB LBAS40-05LT1G=45 LBAS40-06LT1G=L2 ELECTRICAL CHARACTERIS...