S-LBAS70BST5G

LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection.Single diodes and double diodes with different pinning are available. We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device LBAS70BST1G S-LBAS70BST1G LBAS70BST3G S-LBAS70BST3G LBAS70BST5G S-LBAS70BST5G Marking R R R Shipping 5000/Tape&Reel 8000/Tape&Reel 10000/Tape&Reel LBAS70BST5G S-LBAS70BST5G 1 SOD882 2 1 Cathode 2 Anode Rev.A 1/4 LESHAN RADIO COMPANY, LTD. LBAS70BST5G , S-LBAS70BST5G MAXIMUM RATINGS (TA = 25°C) Parameter Continuous reverse voltage Continuous forward current Repetitive Peak forward surge current Non-repetitive peak forward current Storage temperature Junction temperature Operating ambient temperature Symbol VR IF IFSM IFSM Tstg Tj Tamb Min. -65 -65 Max. 70 70 70 100 +150 150 +150 Unit V mA mA mA °C °C °C Conditions tp<1s;δ<0.5 tp<10ms ELECTRICAL CHARACTERISTICS(TA= 25°C) Parameter Symbol Max. Forward voltage(Fig.1) VF 410 750 1 Reverse current(Fig.2 ;note1) IR 100 10 Charge carrier life time (krakauer method) τ 100 Diode capacit...