LESHAN RADIO COMPANY, LTD.
Schottky barrier diode
LRB421LT1G
zApplications Low power rectification
LRB421LT1G
3
zFeat...
LESHAN RADIO COMPANY, LTD.
Schottky barrier diode
LRB421LT1G
zApplications Low power rectification
LRB421LT1G
3
zFeatures 1) Small mold type. (SOT-23) 2) Low IR 3) High reliability.
zConstruction Silicon epitaxial planar
z We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta = 25°C)
Param eter Revers e voltage (repetitive peak) Revers e voltage (DC) Average rectified forward current(*1) Forward current s urge peak (60Hz・1cyc)(*1) Junction tem perature Storage tem perature
(*1) Rating of per diode
Sym bol
VRM VR Io IFSM Tj Ts tg
Lim its 40 40 100 1 125
-40 to +125
zElectrical characteristics (Ta = 25°C)
Param eter Forwarad voltage
Revers e current Capacitance between term inal
Sym bol Min. Typ. Max.
VF1 - - 0.55
VF2 - - 0.34
IR - - 30
Ct
-6
-
1 2
SOT– 23
3 CATHODE
1 ANODE
Unit V V mA A ℃ ℃
Unit Conditions V IF=100m A V IF=10m A µA VR=10V pF VR=10V , f=1MHz
z Device marking and ordering information
Device
Marking
LRB421LT1G
D3C
LRB421LT3G
D3C
Shipping 3000/Tape&Reel 10000/Tape&Reel
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
FORWARD CURRENT:IF(mA)
FORWARD VOLTAGE:VF(mV)
LRB421LT1G
Electrical characteristic curves (Ta = 25°C)
100 Ta=125℃
10 Ta=75℃
1
0.1
Ta=25℃ Ta=-25℃
0.01 0
100 200 300 400 500
FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
600
REVERSE CURRENT:IR(uA)
10000 1000 100 10 1 0.1 0.01 0
Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
35
CA...