BLM4953

Pb Free Product BLM4953 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM4953 uses advanced trench technology to prov ide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V D1 G1 G2 D2 S1 S2 Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package 4953 BLM4953 SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit -30 ±20 -5.1 -20 2.5 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 50 ℃/W Page1 www.belling.com.cn V2.0 Pb Free Product BLM4953 Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250µA Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V ...