BLM9435

BLM9435 P-Channel Enhancement Mode MOSFET FEATURES VDS VGS －30V ±20V RDSon TYP 51mR@-10V 68mR@-4V5 ID －5.4A DESCRIPTION This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS Load Switch TFT panel power switch DCDC conversion Pin Configuration Packaging Information Page 1 V1.0 P-Channel Enhancement Mode MOSFET BLM9435 Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Vdss Vgss -30 ±20 Drain Current (Note 1) Continuous TA=25°C Pulsed (Note 2) Id -5.4 -20 Total Power Dissipation (Note 1) Pd 1.5 Operating and Storage Junction Temperature Range Tj,Tstg -55~150 Unit V V A A W ℃ Electrical Characteristics @TA=25℃ unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(br)dss Vgs=0V,Id=-250uA -30 -36 -- V Zero Gate Voltage Drain Current Gate–Body Leakage Current Idss Vds=-24V,Vgs =0V -- -0.02 -1 uA Igss Vgs=±20V,Vds=0V -- ±1.5 ±100 nA ON CHARACTERISTICS Gate Threshold Voltage Vgs(th ) Vds=Vgs,Id=-250µA -1 -1.46 -3 V Drain-Source On-state Resistance Rds(on) Vgs=-10V,Id=-4.6A -Vgs=-4.5V,Id...