BLM138K

Pb Free Product BLM138K N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES ● VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating：HBM 2300V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●Direct Logic-Level Interface: TTL/CMOS ●Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. ●Battery Operated Systems ●Solid-State Relays Marking and pin Assignment SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package 138K BLM138K SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit 50 ±20 0.22 0.88 0.35 -55 To 150 350 Unit V V A A W ℃ ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=50V,VGS=0V Min Typ Max Unit 50 65 -- 1 V μA www.belling.com.cn Page 1 V2.0 Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State R...