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BLM7002K

BELLING

N-Channel Enhancement Mode Power MOSFET

Pb Free Product BLM7002K N-Channel Enhancement Mode Power MOSFET General Features ● VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ ...


BELLING

BLM7002K

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Pb Free Product BLM7002K N-Channel Enhancement Mode Power MOSFET General Features ● VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating:HBM 2300V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Application ●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoids, lamps, hammers,display, memories, transistors, etc. ●Battery operated systems ●Solid-state relays Marking and pin assignment SOT-23 top view Package Marking And Ordering Information Device Marking 7002K Device BLM7002K Device Package SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =150℃) TA =25℃ TA =100℃ Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Characteristic Symbol VDS VGS ID IDM PD TJ,TSTG Limit 60 ±20 0.3 0.19 0.8 0.35 -55 To 150 Unit V V A A W ℃ Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 350 ℃/W Page1 www.belling.com.cn V2.0 Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Input Capacit...




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