Pb Free Product
BLM7002K
N-Channel Enhancement Mode Power MOSFET
General Features
● VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ ...
Pb Free Product
BLM7002K
N-Channel Enhancement Mode Power MOSFET
General Features
● VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V
ESD Rating:HBM 2300V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Schematic diagram
Application
●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoids, lamps, hammers,display,
memories,
transistors, etc. ●Battery operated systems ●Solid-state relays
Marking and pin assignment
SOT-23 top view
Package Marking And Ordering Information
Device Marking 7002K
Device BLM7002K
Device Package SOT-23
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ =150℃)
TA =25℃ TA =100℃
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Characteristic
Symbol VDS VGS
ID
IDM PD TJ,TSTG
Limit
60 ±20 0.3 0.19 0.8 0.35 -55 To 150
Unit
V V
A
A W ℃
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
350 ℃/W
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V2.0
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3) Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance Dynamic Characteristics (Note4) Input Capacit...