BLV40N20

BLV40N20 N-channel Enhancement Mode Power MOSFET Preliminary SEP. 2009 BVDSS RDS(ON) ID 200V 50mΩ 40A 200V 40A VDMOS ，、， PDP ( TC=25oC ) VDS VGS ID IDR ( 1) ( 1) : 1. PW<10us, duty cycle<1% http://www.belling.com.cn 200 + 30 40 160 40 160 V V A A A A Page 1/3 BLV40N20 ( TC=25C ) BVDSS RDS(ON) VGS(th) IDSS IGSS Ciss Coss Crss - - VGS=0V, ID=1mA VGS=10V, ID=20A VDS=VGS, ID=250uA VDS=200V, VGS=0V VGS= ± 20V VDS=25V VGS=0V f = 1MHz 200 2 - 220 0.047 3 2300 450 80 - 0.055 4 10 ±100 - V Ω V uA nA pF pF pF http://www.belling.com.cn Page 2/3 BLV40N20 TO247 http://www.belling.com.cn Page 3/3 ...