DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2981
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION This produc...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK2981
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION This product is N-Channel MOS Field Effect
Transistor designed for high current switching applications.
FEATURES Low on-resistance
RDS(on)1 = 27 mΩ (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 50 mΩ (MAX.) (VGS = 4 V, ID = 10 A) Low Ciss : Ciss = 860 pF (TYP.) Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK2981
TO-251
2SK2981-Z
TO-252
PACKAGE DRAWING (Unit : mm)
7.0 MIN. 5.5 ±0.2 13.7 MIN.
1.6 ±0.2
6.5 ±0.2 5.0 ±0.2
4
1 23
1.3 MAX.
1.5
+0.2 –0.1
2.3 ±0.2 0.5 ±0.1
0.6 ±0.1 2.3 2.3
0.6 ±0.1
0.75
1. Gate 2. Drain 3. Source 4. Fin (Drain)
TO-251(MP-3)
+0.2 –0.1
6.5 ±0.2 5.0 ±0.2
4
1.5
2.3 ±0.2 0.5 ±0.1
1.0 MIN. 1.5 TYP. 0.5
10.0 MAX.
5.5 ±0.2
0.8 4.3 MAX.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0)
VDSS
30
Gate to Source Voltage (VDS = 0)
VGSS
±20
Drain Current (DC) Drain Current (Pulse) Note
ID(DC) ID(pulse)
±20 ±80
Total Power Dissipation (Tc = 25 °C) PT 20
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to + 150
V V A A W °C °C
Note PW ≤ 10 µs, Duty cycle ≤ 1 %
12 3
12.0 MIN.
1.3 MAX.
2.3 2.3
0.9 0.8 MAX. MAX.
0.8
1. Gate 2. Drain 3. Source 4. Fin (Drain)
TO-252(MP-3Z) (SURFACE MOUNT TYPE)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark
The diode connected between the g...