D2220

Power Transistors 2SD2220 Silicon NPN triple diffusion planar type Darlington For low-frequency amplification s Features q Suitable for the driver circuit of a motor, a printer hammer and like that, since this transistor is designed for the high forward current transfer ratio hFE q A shunt resistor is omitted from the driver q Allowing supply with the radial taping 10.8±0.2 7.5±0.2 Unit: mm 4.5±0.2 3.8±0.2 90° 0.65±0.1 0.85±0.1 2.5±0.1 0.7±0.1 1.0±0.1 0.7±0.1 0.8C 0.8C 16.0±1.0 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg 100 80 5 1.5 1 1.5 150 –55 to +150 Unit V V V A A W ˚C ˚C 2.5±0.2 0.8C 0.5±0.1 2.5±0.2 123 0.4±0.1 2.05±0.2 1:Emitter 2:Collector 3:Base MT3 Type Package Internal Connection C B E s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency ICBO IEBO VCBO VCEO VEBO hFE* VCE(sat) VBE(sat) fT VCB = 25V, IE = 0 VEB = 4V, IC = 0 IC = 100µA, IE = 0 IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCE = 10V, IC = 1A IC = 1A, IB = 1mA IC = 1A, I...