70N06 RFP70N06 Datasheet

70N06 Datasheet, PDF, Equivalent


Part Number

70N06

Description

RFP70N06

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
Datasheet
Download 70N06 Datasheet


70N06
Data Sheet
September 2013
RFP70N06
N-Channel Power MOSFET
60V, 70A, 14 m
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers and
relay drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA78440.
Ordering Information
PART NUMBER
RFP70N06
PACKAGE
TO-220AB
BRAND
RFP70N06
NOTE: When ordering use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.
Features
• 70A, 60V
• rDS(on) = 0.014
• Temperature Compensated PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
©2005 Fairchild Semiconductor Corporation
RFP70N06 Rev. D1

70N06
RFP70N06
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP70N06
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
60
60
70
Refer to Peak Current Curve
±20
Refer to UIS Curve
150
1.0
-55 to 175
300
260
V
V
A
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
t(ON)
td(ON)
tr
td(OFF)
tf
t(OFF)
Qg(TOT)
Qg(10)
Qg(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V (Figure 11)
VGS = VDS, ID = 250µA (Figure 10)
VDS = 60V, VGS = 0V
VDS = 0.8 x Rated BVDSS, TC = 150oC
VGS = ±20V
ID = 70A, VGS = 10V (Figure 9)
VDD = 30V, ID 70A, RL = 0.43,
VGS = 10V, RGS = 2.5
(Figure 13)
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 48V, ID = 70A,
RL = 0.68
Ig(REF) = 2.2mA
(Figure 13)
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)
TO-220
-
MIN TYP MAX UNITS
60 -
-
V
2 -4
V
- - 1 µA
- - 25 µA
- - ±100 nA
- - 0.014
- - 190 ns
- 10 -
ns
- 137 -
ns
- 32 -
ns
- 24 -
ns
- - 73 ns
- 120 156 nC
- 65 85 nC
- 5.0 6.5 nC
- 2250 -
pF
- 792 -
pF
- 206 -
pF
- - 1.0 oC/W
- - 62 oC/W
- --
-
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Source to Drain Diode Voltage
VSD
ISD = 70A
- 1.5 V
Reverse Recovery Time
trr ISD = 70A, dISD/dt = 100A/µs
- 52 ns
NOTES:
2. Pulse test: pulse width 300ms, duty cycle 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
©2005 Fairchild Semiconductor Corporation
RFP70N06 Rev. D1


Features Data Sheet September 2013 RFP70N06 N- Channel Power MOSFET 60V, 70A, 14 mΩ These are N-Channel power MOSFETs manuf actured using the MegaFET process. This process, which uses feature sizes appr oaching those of LSI circuits, gives op timum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such a s switching regulators, switching conve rters, motor drivers and relay drivers. These transistors can be operated dire ctly from integrated circuits. Formerly developmental type TA78440. Ordering Information PART NUMBER RFP70N06 PACK AGE TO-220AB BRAND RFP70N06 NOTE: Whe n ordering use the entire part number. Add the suffix 9A to obtain the TO-263A B variant in tape and reel, e.g. RF1S70 N06SM9A. Features • 70A, 60V • rD S(on) = 0.014Ω • Temperature Compen sated PSPICE® Model • Peak Current v s Pulse Width Curve • UIS Rating Curv e (Single Pulse) • 175oC Operating Te mperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount C.
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