L1SS355T1

LESHAN RADIO COMPANY, LTD. Switching diode L1SS355T1 .Applications High speed switching .Features 1) Small surface mounting type. 2) High Speed.(trr=1.2ns Typ.) 3) High reliability with high surge current handling capability. 4) Pb-Free package is available. .Construction Silicon epitaxial planar . Device Marking and Ordering Information Device Marking L1SS355T1 A L1SS355T1G .Absolute maximum ratings A (Pb-Free) (Ta=25°C) Parameter Symbol Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (1s) Junction temperature Storage temperature VRM VR IFM IO Isurge Tj Tstg Shipping 3000/Tape&Reel 3000/Tape&Reel Limits 90 80 225 100 500 125 −55~+125 Unit V V mA mA mA °C °C 1 CATHODE 2 ANODE 1 2 SOD–323 .Electrical characteristics (Ta=25°C) Parameter Symbol Forward voltage VF Reverse current IR Capacitance between terminals CT Reverse recovery time trr Min. − − − − Typ. − − − − Max. 1.2 0.1 3.0 4 Unit Conditons V IF=100mA µA VR=80V pF VR=0.5V, f=1MHz ns VR=6V, IF=10mA, RL=100Ω 1/3 LESHAN RADIO COMPANY, LTD. L1SS355T1 .Electrical characteristic curves (Ta=25°C) FORWARD CURRENT : IF (A) 1 100m 10m Ta=125°C 75°C 25°C −25°C 1m 100µ 10µ 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE : VF (V) Fig.1 Forward characteristics REVERSE CURRENT : IR (A) 1m 0.1m 10µ 1µ Ta=125°C Ta=75°C 100n 10n Ta=25°C 1n 0 20 40 60 80 100 120 REVERSE VOLTAGE : VR (V) Fig.2 Reverse characteristics CAPACITANCE BETWEEN TE...