L1SS356T1G

LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications High frequency switching z Features 1) Small surface mounting type. 2) High reliability. 3) We declare that the material of product compliance with RoHS requirements. z Construction Silicon epitaxial planar Driver Marking L1SS356T1G =B Absolute maximum ratings (TA=25°C) Parameter Symbol DC reverse voltage VR DC forward current IF Junction temperature Tj Storage temperature Tstg Limits 35 100 125 -55~+125 L1SS356T1G 1 2 SOD– 323 1 CATHODE 2 ANODE Unit V mA °C °C Electrical characteristics (TA=25°C) Parameter Symbol Min. Typ. Max. Unit Forward voltage VF – – 1.0 V Reverse current IR – – 10 nA Capacitance between terminals CT – – 1.2 pF Forward operating resistance rF – – 0.9 Ω Conditions IF=10mA VR=25V VR=6V, f =1MHz IF=2mA, f =100MHz Ordering Information Device L1SS356T1G L1SS356T3G Marking B B Shipping 3000/Tape&Reel 10000/Tape&Reel 1/3 FORWARD CURRENT : IF(mA) LESHAN RADIO COMPANY, LTD. L1SS356T1G Electrical characteristic curves (TA=25 °C) 1 100m 10m 1m 100 10 1 100n 0.4 0.5 0.6 0.7 0.8 0.9 1.0 FORWARD VOLTAGE : VF (V) 1.1 Fig. 1 Forward characteristics REVERSE CURRENT : IR (nA) 10.0 1.0 0.1 0 10 20 30 40 50 REVERSE VOLTAGE : VR (V) Fig. 2 Reverse characteristics 1.0 3 f=100MHz 0.5 2 CAPACITANCE BETWEEN TERMINALS : CT (pF) 0.2 0 12 5 10 FORWARD CURRENT : IF (mA) Fig. 4 Forward operating resistance characteristics 1 0 0 10 20 30 REVERSE VOLTAGE : V...