L1SS400CST1G

Switching diode Applications High speed switching Features 1) Extremely small surface mounting type. 2) High Speed. 3) High reliability. Construction Silicon epitaxial planar We declare that the material of product compliance with RoHS requirements. Device Marking L1SS400CST1G=3 LESHAN RADIO COMPANY, LTD. L1SS400CST1G 1 2 SOD - 923 1 CATHODE 2 ANODE ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Peak reverse voltage VRM DC reverse voltage VR Peak forward current I FM Mean rectifying current IO Surge current (1s) I surge Junction temperature Tj Storage temperature Tstg Limits 90 80 225 100 500 125 – 55 ~ +125 Unit V V mA mA mA °C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Symbol Min. Forward voltage VF – Reverse current IR – Capacitance between terminals CT – Reverse recovery time trr – Typ. – – 0.72 – Max. 1.2 0.1 3.0 4 Unit Conditions V I F=100mA µA VR=80V pF VR=0.5V , f=1MHz n VsR=6V , IF=10mA , RL=100 Ω ORDRING INFORMATION Device Marking L1SS400CST1G 3 L1SS400CST3G 3 Shipping 3000/Tape&Reel 10000/Tape&Reel 1/3 FORWARD CURRENT : IF (A) LESHAN RADIO COMPANY, LTD. L1SS400CST1G ELECTRICAL CHARACTERISTIC CURVES (Ta = 25°C) 1 1m REVERSE CURRENT : IR (A) 100m 10m 1m 0.1m 10µ 1µ 100n 100µ 10n 10µ 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE : VF (V) Fig.1 Forward characteristics 10 5 2 1 0.5 1n 0 20 40 60 80 100 120 REVERSE VOLTAGE : VR (V) Fig.2 Reverse characteristics 3 2 1 REVERSE RECOVERY TIM...