L1SS400CST5G

LESHAN RADIO COMPANY, LTD. Switching diode Applications High speed switching Features 1) Extremely small surface mounting type. 2) High Speed. 3) High reliability. Construction Silicon epitaxial planar L1SS400CST5G S-L1SS400CST5G 1 2 SOD - 923 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 CATHODE 2 ANODE ORDRING INFORMATION Device Marking L1SS400CST5G S-L1SS400CST5G 3 Shipping 8000/Tape&Reel ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Peak reverse voltage VRM DC reverse voltage VR Peak forward current I FM Mean rectifying current IO Surge current (1s) I surge Junction temperature Tj Storage temperature Tstg Limits 90 80 225 100 500 125 – 55 ~ +125 Unit V V mA mA mA °C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Symbol Min. Forward voltage VF – Reverse current IR – Capacitance between terminals CT – Reverse recovery time trr – Typ. – – 0.72 – Max. 1.2 0.1 3.0 4 Ω Unit Conditions V I F=100mA µA VR=80V pF VR=0.5V , f=1MHz n s V R=6V , IF=10mA , RL=100 Rev.O 1/3 FORWARD CURRENT : IF (A) LESHAN RADIO COMPANY, LTD. L1SS400CST5G,S-L1SS400CST5G ELECTRICAL CHARACTERISTIC CURVES (Ta = 25°C) 1 1m REVERSE CURRENT : IR (A) 100m 10m 1m 0.1m 10µ 1µ 100n 100µ 10n 10µ 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE : VF (V) Fig.1 Forward characte...