LMBD301LT1

LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital applications.They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements.They are also available in a Surface Mount package. EXtremely Low Minority Carrier Lifetime –15ps(Typ) Very Low Capacitance –1.5pF(Max)@VR=15V Low Reverse Leakage –IR=13 nAdc(Typ) LMBD301 3 CATHODE 1 ANODE LMBD301LT1 3 1 2 SOT–23 MAXIMUM RATINGS(TJ=125°C unless otherwise noted) LBD301 LMBD301LT1 Rating symbol value unit Reverse Voltage VR 30 Volts Forward Power Dissipation PF @TA=25 °C 280 200 mW Derate above 25 °C 2.8 2.0 mW/ °C Operating Junction TJ °C Temperature Range –55 to +125 Storage Temperature Range T stg –55 to +150 °C DEVICE MARKING LMBD301LT1=4T ELECTRICAL CHARACTERISTICS(TA=25 °C unless otherwise noted) Characteristic Symbol Min Typ Reverse Breakdown Voltage(IR=10µA) V (BR)R 30 — Total Capacitance(VR=15V,f=1.0MHz,)Figure1 CT — 0.9 Reverse Leakage(VR=25V)Figure3 I R — 13 Forward Voltage(IF=1.0mAdc)Figure4 V F — 0.38 Forward Voltage(IF=10mAdc)Figure4 V F — 0.52 Max — 1.5 200 0.45 0.6 Unit Volts pF nAdc Vdc Vdc NOTE:LMBD301LT1 is also available in bulk packaging.Use LMBD301L as the device title to order this device in bulk. LMBD301LT1...