MRF9045NR1

NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. Typical Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 19 dB Efficiency — 41% (Two Tones) IMD — - 31 dBc Integrated ESD Protection Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power Features Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. 200_C Capable Plastic Package N Suffix Indicates Lead - Free Terminations. RoHS Compliant. TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Document Number: MRF9045N Rev. 12, 9/2008 MRF9045NR1 945 MHz, 45 W, 28 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 1265 - 09, STYLE 1 TO - 270 - 2 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C VDSS VGS PD - 0.5, +65 - 0.5, + 15 177 1.18 Vdc Vdc W W/°C Storage Temperature Range Operating Junction Temperatur...