NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN
Freescale Semiconductor Technical Data
RF Power Field Eff...
NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN
Freescale Semiconductor Technical Data
RF Power Field Effect
Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
Typical Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 19 dB Efficiency — 41% (Two Tones) IMD — - 31 dBc
Integrated ESD Protection
Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power
Features
Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount. 200_C Capable Plastic Package N Suffix Indicates Lead - Free Terminations. RoHS Compliant. TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
Document Number: MRF9045N Rev. 12, 9/2008
MRF9045NR1
945 MHz, 45 W, 28 V LATERAL N - CHANNEL
BROADBAND RF POWER MOSFET
CASE 1265 - 09, STYLE 1 TO - 270 - 2 PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS VGS PD
- 0.5, +65
- 0.5, + 15
177 1.18
Vdc
Vdc
W W/°C
Storage Temperature Range Operating Junction Temperatur...