Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
...
Freescale Semiconductor Technical Data
RF Power Field Effect
Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies from 2500 to 2700 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Typical Doherty Single--Carrier W--CDMA Characterization Performance: VDD = 28 Volts, IDQA = 300 mA, VGSB = 1.3 Vdc, Pout = 14 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 2570 MHz 2595 MHz 2620 MHz
Gps (dB) 15.4 15.2 15.0
ηD Output PAR ACPR
(%)
(dB)
(dBc)
39.1 6.8 --33.6
38.2 6.8 --36.0
36.9 6.8 --40.0
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2595 MHz, 109 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 3 dB Compression Point ≃ 83 Watts CW Features
Production Tested in a Symmetrical Doherty Configuration 100% PAR Tested for Guaranteed Output Power Capability Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 13.
Document Number: MRF8P26080H Rev. 0, 12/2010
MRF8P26080HR3 MRF8P26...
