BC517

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. BC517 EPITAXIAL PLANAR NPN TRANSISTOR BC JA MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC Tj Tstg RATING 40 30 10 500 625 150 -55ᴕ150 UNIT V V V mA mW ᴱ ᴱ L M C K E G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. COLLECTOR 2. BASE 3. EMITTER TO-92 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Collector Output Capacitance Cob TEST CONDITION IC=0.1mA, IE=0 IC=10mA, IB=0 IE=1.0mA, IC=0 VCB=40V, IE=0 VEB=10V, IC=0 IC=100mA, VCE=2V IC=100mA, IB=1mA IC=100mA, IB=1mA IC=100mA, VCE=2V, f=100MHz VCB=10V, f=1MHz, IE=0 MIN. 40 30 10 30k - TYP. 1.5 220 5.0 MAX. 1.0 1.0 1.0 2.0 - UNIT V V V ỌA ỌA V V MHz pF 1999. 11. 30 Revision No : 1 1/2 DC CURRENT GAIN h FE BC517 h FE - I C 10 6 Ta=125 C 10 5 Ta=25 C Ta=-55 C 10 4 10 3 10 -1 100 101 102 COLLECTOR CURRENT I C (mA) 10...