PD - 91682A
IRG4PSC71UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
F...
PD - 91682A
IRG4PSC71UD
INSULATED GATE BIPOLAR
TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations
IGBT co-packaged with HEXFRED ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge configurations
Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247
Creepage distance increased to 5.35mm
C
G E
n-channel
VCES = 600V VCE(on) typ. = 1.67V @VGE = 15V, IC = 60A
Benefits
Generation 4 IGBT's offer highest efficiencies available
Maximum power density, twice the power handling of TO-247, less space than TO-264
IGBTs optimized for specific application conditions HEXFRED diodes optimized for performance with IGBTs Cost and space saving in designs that require
multiple, paralleled IGBTs
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Thermal Resistance\ Mecha...