A Business Partner of Renesas Electronics Corporation.
Preliminary
NE85630
/
2SC4226
JEITA Part No.
Data Sheet
NPN...
A Business Partner of Renesas Electronics Corporation.
Preliminary
NE85630
/
2SC4226
JEITA Part No.
Data Sheet
NPN Silicon RF
Transistor
R09DS0022EJ0200 Rev.2.00
NPN Epitaxial Silicon RF
Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold Jun 29, 2011
DESCRIPTION
The NE85630 / 2SC4226 is a low supply voltage
transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the
transistor has been applied 3-pin super minimold package.
FEATURES
Low noise : NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz High gain : ⏐S21e⏐2 = 9 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz 3-pin super minimold package
ORDERING INFORMATION
Part Number
NE85630 2SC4226
NE85630-T1 2SC4226-T1
Order Number
NE85630-A 2SC4226-A
NE85630-T1-A 2SC4226-T1-A
Package 3-pin super
Minimold (Pb-Free)
Quantity 50 pcs (Non reel)
3 kpcs/reel
Supplying Form 8 mm wide embossed taping
Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC Ptot Note Tj Tstg
Ratings 20 12 3 100 150 150
−65 to +150
Unit V V V mA
mW °C °C
Note Free air
CAUTION Observe precautions when ha...