20N60

UNISONIC TECHNOLOGIES CO., LTD 20N60 20A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 20N60 is universally applied in motor control, UPS, DC choppers and switch-mode and resonant-mode power supplies.  FEATURES * RDS(ON) < 0.45Ω @ VGS=10V, ID=10A * High switching speed  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 20N60L-T47-T 20N60G-T47-T 20N60L-T3P-T 20N60G-T3P-T Pin Assignment: G: Gate D: Drain S: Source Package TO-247 TO-3P Pin Assignment 123 GDS GDS Packing Tube Tube  MARKING www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-587.I 20N60 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 V ±30 V Drain Current Continuous Pulsed ID IDM 20 A 80 A Avalanche Energy Power Dissipation Single Pulsed(Note 2) TO-247 TO-3P EAS PD 1200 370 416 mJ W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the d...