IXSA20N60B2D1

High Speed IGBT IXSA 20N60B2D1 IXSP 20N60B2D1 Short Circuit SOA Capability Preliminary Data Sheet VCES = 600 V IC25 = 35 A VCE(sat) = 2.5 V Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VCGlaEm= p1e5dVi,nTdJu=ct1iv2e5°loCa,dRG = 82Ω tSC (SCSOA) PC TJ TJM Tstg Weight VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 82 Ω, non repetitive TC = 25°C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10s Maximum Ratings 600 600 ± 20 ± 30 35 20 11 60 @ 0IC.M8 = 32 VCES 10 V V V V A A A A A μs 190 -55 ... +150 150 -55 ... +150 2 300 260 W °C °C °C g °C °C Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions IC = 250 μA, VGE = 0 V IC = 750 μA, VCE = VGE VVGCEE = = 0VVCES VCE = 0 V, VGE = ± 20 V IC = 16A, VGE = 15 V Characteristic Values (TJ = 25°C, unless min. otherwise specified) typ. max. 600 3.5 TJ = 125 °C V 6.5 V 85 μA 0.6 mA ± 100 nA 2.5 V © 2004 IXYS All rights reserved TO-220 (IXSP) GC E TO-220 (IXSA) C (TAB) G C C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Features International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast fall time for switching speeds up to 20 kHz App...