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DSR01S30SL Dataheets PDF



Part Number DSR01S30SL
Manufacturers Toshiba
Logo Toshiba
Description Schottky Barrier Diode
Datasheet DSR01S30SL DatasheetDSR01S30SL Datasheet (PDF)

Schottky Barrier Diode Silicon Epitaxial DSR01S30SL 1. Applications • High-Speed Switching 2. Features (1) Low reverse current: IR = 0.7 µA (max) @ VR = 30 V 3. Packaging and Internal Circuit DSR01S30SL 1: Cathode 2: Anode SL2 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 30 V Peak forward current IFM 200 mA Average rectified current IO (Note 1) 100 mA Non-repetitive peak forward surge curren.

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Schottky Barrier Diode Silicon Epitaxial DSR01S30SL 1. Applications • High-Speed Switching 2. Features (1) Low reverse current: IR = 0.7 µA (max) @ VR = 30 V 3. Packaging and Internal Circuit DSR01S30SL 1: Cathode 2: Anode SL2 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 30 V Peak forward current IFM 200 mA Average rectified current IO (Note 1) 100 mA Non-repetitive peak forward surge current IFSM (Note 2) 2 A Junction temperature Tj 125  Storage temperature Tstg -55 to 125  Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a glass epoxy circuit board of 25.4 mm × 25.4 mm × 1.6 mm, Pad dimension of 645 mm2. Note 2: Measured with a 10 ms pulse. Start of commercial production 2015-06 1 2015-06-11 Rev.1.0 5. Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Forward voltage Reverse current Total capacitance 6. Marking Symbol VF IR Ct Note Test Condition IF = 10 mA IF = 100 mA VR = 10 V VR = 30 V VR = 0 V, f = 1 MHz Min      DSR01S30SL Typ. Max Unit 0.37 0.50 0.51 0.62  0.35  0.7 8.2  V µA pF 7. Usage Considerations • Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design. 8. Land Pattern Dimensions (for reference only) (Unit: mm) 2 2015-06-11 Rev.1.0 9. Characteristics Curves (Note) DSR01S30SL Fig. 9.1 IF - VF Fig. 9.2 IR - VR Fig. 9.3 Ct - VR Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 3 2015-06-11 Rev.1.0 Package Dimensions DSR01S30SL Unit: mm Weight: 0.2 mg (typ.) TOSHIBA: 1-1AL1A Nickname: SL2 Package Name(s) 4 2015-06-11 Rev.1.0 DSR01S30SL RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. • PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this docu.


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