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DSR05S30CTB Dataheets PDF



Part Number DSR05S30CTB
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon Epitaxial Schottky Barrier Type Diode
Datasheet DSR05S30CTB DatasheetDSR05S30CTB Datasheet (PDF)

DSR05S30CTB TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR05S30CTB High Speed Switching Application Unit: mm 0.25±0.02 0.65±0.02 Absolute Maximum Ratings (Ta = 25°C) 0.7±0.02 1.2±0.05 CATHODE MARK Characteristic Symbol Rating Unit Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range VR IO IFSM Tj Tstg 30 500* 5 125 −55 to 125 V mA A °C °C 0.05±0.03 0.8±0.05 0.05±0.03 0.38+-00..0023 *: Mounted on a glass-epoxy c.

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DSR05S30CTB TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR05S30CTB High Speed Switching Application Unit: mm 0.25±0.02 0.65±0.02 Absolute Maximum Ratings (Ta = 25°C) 0.7±0.02 1.2±0.05 CATHODE MARK Characteristic Symbol Rating Unit Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range VR IO IFSM Tj Tstg 30 500* 5 125 −55 to 125 V mA A °C °C 0.05±0.03 0.8±0.05 0.05±0.03 0.38+-00..0023 *: Mounted on a glass-epoxy circuit board of 20 mm × 20 mm, pad dimensions of 4 mm × 4 mm. Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the CST2B reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling JEDEC ― JEITA ― TOSHIBA 1-1V1B Weight: 0.7 mg (typ.) Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) VF (3) IR(1) CT Test Circuit Test Condition ― IF = 10mA ― IF = 200mA ― IF = 500mA ― VR = 30V ― VR = 0, f = 1 MHz Min Typ. Max Unit ― 0.31 ― ― 0.42 ― V ― 0.50 0.55 ― 0.20 5 ⎯ 120 ⎯ μA pF Marking Pin Assignment (top view) 70 Handling Precaution Schottky barrier diodes have reverse current characteristic compared to the other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. 1 2009-08-03 FORWARD CURRENT IF (mA) DSR05S30CTB REVERSE CURRENT IR (μuAA)) 1000 100 Ta=100℃ 75℃ 10 50℃ 1 0.1 IF - VF 25℃ 0℃ -25℃ 1000 100 10 1 0.1 0.01 IR - VR Ta=100℃ 75℃ 50℃ 25℃ 0.01 0 1000 100 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE VF (V) 0.001 0.7 0 CT - VR f=1MHz Ta=25℃ 10000 1000 5 10 15 20 25 REVERSE VOLTAGE VR (V) rth-t 30 TRANaSInsEiNeTntTtHhEerRmMalA iL ImMpePdEaDnAceNCrEth rt (h (°℃/C /W)W) 10 1 0 5 10 15 20 25 REVERSE VOLTAGE VR (V) 100 Single pulse Ta=25℃ 10 Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm. 1 30 0.001 0.01 0.1 1 10 100 1000 TIiMmEe tt(s(s) ) TTOOTTAALL CCAAPPAACSIITTAANNCCEE CCTT((ppF)F) 2 2009-08-03 DSR05S30CTB RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or.


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