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FS30AS-06

Mitsubishi Electric Semiconductor

Nch POWER MOSFET

FS30AS-06 MITSUBISHI Nch POWER MOSFET FS30AS-06 HIGH-SPEED SWITCHING USE OUTLINE DRAWING 6.5 5.0 ± 0.2 r Dimensions i...


Mitsubishi Electric Semiconductor

FS30AS-06

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FS30AS-06 MITSUBISHI Nch POWER MOSFET FS30AS-06 HIGH-SPEED SWITCHING USE OUTLINE DRAWING 6.5 5.0 ± 0.2 r Dimensions in mm 0.5 ± 0.1 1.5 ± 0.2 5.5 ± 0.2 10MAX. 2.3MIN. 1.0MAX. ¡10V DRIVE ¡VDSS .................................................................................. 60V ¡rDS (ON) (MAX) .............................................................. 30mΩ ¡ID ......................................................................................... 30A ¡Integrated Fast Recovery Diode (TYP.) ............. 65ns APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 0.9MAX. 2.3 1.0 2.3 A 0.5 ± 0.2 0.8 2.3 qwe wr q e q GATE w DRAIN e SOURCE r DRAIN MP-3 MAXIMUM RATINGS (Tc = 25°C) Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V L = 100µH Typical value Conditions Ratings 60 ±20 30 120 30 30 120 35 –55 ~ +150 –55 ~ +150 0.26 Unit V V A A A A A W °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FS30AS-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter Test conditions V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Drain-source breakdown voltage Gate-source leakage current Drain-source l...




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