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S50D40 Dataheets PDF



Part Number S50D40
Manufacturers Mospec Semiconductor
Logo Mospec Semiconductor
Description SCHOTTKY BARRIER RECTIFIERS
Datasheet S50D40 DatasheetS50D40 Datasheet (PDF)

MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 125 Op.

  S50D40   S50D40


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MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 125 Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O ESD: 8KV(Min.) Human-Body Model In compliance with EU RoHs 2002/95/EC directives S50D30 Thru S50D60 SCHOTTKY BARRIER RECTIFIERS 50 AMPERES 30-60 VOLTS TO-3P MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectifier Forward Current Per diodes Total Device (Rated VR),TC=100 Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) S50D Symbol 30 35 40 45 50 60 Unit VRRM VRWM 30 35 40 45 50 60 VR V VR(RMS) 21 25 28 32 35 42 V IF(AV) IFM 25 50 50 A A Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) IFSM 400 A Operating and Storage Junction Temperature Range TJ , TSTG -65 to +125 THERMAL RESISTANCES Typical Thermal Resistance junction to case Rθ j-c 1.7 /w ELECTRIAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage ( IF =25 Amp TC = 25 ) ( IF =25 Amp TC = 100 ) VF 30 Maximum Instantaneous Reverse Current ( Rated DC Voltage, TC = 25 ) ( Rated DC Voltage, TC = 100 ) IR S50D 35 40 45 0.60 0.49 3.0 60 50 60 0.70 0.60 Unit V mA DIM MILLIMETERS MIN MAX A 20.63 22.38 B 15.38 16.20 C 1.90 2.70 D 5.10 6.10 E 14.81 15.22 F 11.72 12.84 G 4.20 4.50 H 1.82 2.46 I 2.92 3.23 J 0.89 1.53 K 5.26 5.66 L 18.50 21.50 M 4.68 5.36 N 2.40 2.80 O 3.25 3.65 P 0.55 0.70 Common Cathod Suffix " C " Common Anode Suffix " A " Double Suffix " D " S50D30 Thru S50D60 FIG-1 FORWARD CURRENT DERATING CURVE FIG-2 TYPICAL FORWARD CHARACTERISITICS S50D40-S50D45 S50D50-S50D60 NSTANTANEOUS FORWARD CURRENT (Amp.) AVERAGE FORWARD RECTIFIED CURRENT (Amp.) INSTANTANEOUS REVERSE CURRENT (Amp.) CASE TEMPERATURE ( ) FIG-3 TYPICAL REVERSE CHARACTERISTICS TJ=75oC TJ=25oC PERCENT OF RATED REVERSE VOLTAGE ( ) FIG-5 PEAK FORWARD SURGE CURRENT JUNCTION CAPACITANCE (PF) FORWARD VOLTAGE (Volts) FIG-4 TYPICAL JUNCTION CAPACITANCE S50D40-S50D45 S50D50-S50D60 REVERSE VOLTAGE (Volts) PEAK FORWARD SURGE CURRENT (Amp.) NUMBER OF CYCLES AT 60 Hz .


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