S10N65C

650V N-Channel MOSFET Description The 10N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. Features 9.5A, 650V, RDS(on) = 0.75Ω @VGS = 10 V Low gate charge ( typical 36 nC) Low Crss ( typical 5.8pF) Fast switching 100% avalanche tested Improved dv/dt capability S10N65C 1 TO-220 1 TO-220F 2.Drain 1.Gate 3.Source Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol R JC R CS R JA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient 0510-85899716 10N65 10N65F 650 10 10 * 6.5 6.5 * 40 40 * ±30 758 10 19.8 ...