A1023

■■APPLICATION: High Voltage Applications. ■■MAXIMUM RATINGS（Ta＝25℃） PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO -120 V VCEO -120 V VEBO -5 V IC -800 mA PC 1 W TJ 150 ℃ Tstg -55~150 ℃ A1023 —PNP silicon — 1 TO-92L 1. Emitter 2. Collector 3. Base ■■ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION DC Current Gain hFE 80 240 VCE= -5V，IC= -100mA Collector Cut-off Current ICBO -0.1 µA VCB= -120V，IE=0 Emitter Cut-off Current IEBO -0.1 µA VEB= -5V，IC=0 Collector-Base Breakdown Voltage BVCBO -120 V IC= -1mA，IE=0 Collector-Emitter Breakdown Voltage BVCEO Emitter-Base Breakdown Voltage BVEBO -120 -5 V IC= -10mA，IB=0 V IE= -1mA，IC=0 Base-Emitter Voltage VBE -1 V VCE= -5V，IC= -500mA Collector-Emitter Saturation Voltage VCE(sat) Gain bandwidth product fT 50 -1 120 V IC= -500mA，IB= -50mA MHz IC= -100mA，VCE= -5V Common Base Output Capacitance Cob 40 pF VCB= -10V, IE=0, f = 1MHz ■■hFE Classification Classification hFE O 80~160 Y 120~240 ...