2SK1821-01M
FAP-IIA Series
> Features
- High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving...
2SK1821-01M
FAP-IIA Series
> Features
- High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof
> Applications
- Switching
Regulators - UPS - DC-DC converters - General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
600
Continous Drain Current
ID 2
Pulsed Drain Current
I D(puls)
6
Continous Reverse Drain Current
I DR
2
Gate-Source-Voltage
V GS
±25
Max. Power Dissipation
P D 30
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
N-channel MOS-FET
600V 6,5Ω 2A 30W > Outline Drawing
> Equivalent Circuit
Unit V A A A V W °C °C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=10mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=600V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=1A
VGS=10V
Forward Transconductance
g fs ID=1A VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=300V
t r ID=2A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
t f RGS=25 Ω
Diode Forward On-Vol...
