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IXBL64N250 Dataheets PDF



Part Number IXBL64N250
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Monolithic Bipolar MOS Transistor
Datasheet IXBL64N250 DatasheetIXBL64N250 Datasheet (PDF)

Advance Technical Information High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL64N250 VCES IC110 VCE(sat) = = ≤ 2500V 46A 3.0V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol VCES VCGR VGES VGEM IC25 IICCM110 SSOA (RBSOA) T(SSCC SOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 2500 2500 ±25 ±35 V V V V TC = 25°C TTCC = 110°C = 25°C, 1ms VGE= 15V, TVJ = 12.

  IXBL64N250   IXBL64N250


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