IXTL2N450

High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTL2N450 VDSS ID25 RDS(on) = 4500V = 2A  20 ISOPLUS i5-PakTM Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 4500 4500 20 30 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C 2 8 220 - 55 ... +150 150 - 55 ... +150 A A W C C C Maximum Lead Temperature for Soldering Plastic Body for 10s 300 °C 260 °C Mounting Force 20..120 / 4.5..27 N/lb. 50/60Hz, 1 Minute 4000 V~ 8g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.6kV Note 2, TJ = 125C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 3.5 6.0 V 200 nA 10 A 50 μA 250 μA 20  G S D G = Gate D = Drain Isolated Tab S = Source Features  Silicon Chip on Direct-Copper Bond (DCB) Substrate  Isolated Mounting Surface  4000V~ RMS Electrical Isolation  Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages  Easy to Mount  Space Savings  High Power Density Applications  High Voltage Power Supplies  Capacitor Discharge Applications  Pulse Circuits  Laser and X-Ray Generation Systems © 2013 IXYS CORPORATION, All Rights Reserved DS100458B(9/13) Symbol Test Conditions (TJ = 25...