SOT883B
PMZB290UN
20 V, single N-channel Trench MOSFET
Rev. 1 — 11 May 2012
Product data sheet
1. Product profile
1....
SOT883B
PMZB290UN
20 V, single N-channel Trench MOSFET
Rev. 1 — 11 May 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Fast switching Trench MOSFET technology
Low threshold voltage
Ultra thin package profile with 0.37 mm height
1.3 Applications
Relay driver High-speed line driver
Low-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 200 mA; Tj = 25 °C
[1]
Min Typ Max Unit
- - 20 V
-8 -
8V
- - 1A
- 290 350 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors
PMZB290UN
20 V, single N-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3
Pinning information Symbol Description G gate S source D drain
Simplified outline
Graphic symbol
1 3
2
Transparent top view
SOT883B (DFN1006B-3)
D
G S
017aaa253
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMZB290UN
DFN1006B-3
Description
Leadless ultra small plastic package; 3 solder lands...