PMZB290UN

SOT883B PMZB290UN 20 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Fast switching  Trench MOSFET technology  Low threshold voltage  Ultra thin package profile with 0.37 mm height 1.3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 200 mA; Tj = 25 °C [1] Min Typ Max Unit - - 20 V -8 - 8V - - 1A - 290 350 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. NXP Semiconductors PMZB290UN 20 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G gate S source D drain Simplified outline Graphic symbol 1 3 2 Transparent top view SOT883B (DFN1006B-3) D G S 017aaa253 3. Ordering information Table 3. Ordering information Type number Package Name PMZB290UN DFN1006B-3 Description Leadless ultra small plastic package; 3 solder lands...