Document
ADVANCE INFORMATION
DMS3014SFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
Product Summary
V(BR)DSS 30V
RDS(ON) max 13mΩ @ VGS = 10V 14mΩ @ VGS = 4.5V
ID max TA = 25°C
9.5A
9.0A
Features and Benefits
• DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:
• Low RDS(ON) – minimize conduction losses • Low VSD – reducing the losses due to body diode conduction • Low Qrr – lower Qrr of the integrated Schottky reduces body
diode switching losses • Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies • Small form factor thermally efficient package enables higher
density end products
• Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
• 100% UIS (Avalanche) rated
• 100% Rg tested
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
• Backlighting • Power Management Functions • DC-DC Converters
Mechanical Data
• Case: POWERDI3333-8 • Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections Indicator: See diagram • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 • Weight: 0.072 grams (approximate)
Top View
S Pin 1 S S G
D D D D
Bottom View
8765
Drain
123 4
Top View Pin Configuration
Gate
Source
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number DMS3014SFG-7 DMS3014SFG-13
Case POWERDI3333-8 POWERDI3333-8
Packaging 2000/Tape & Reel 3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com.
POWERDI is a registered trademark of Diodes Incorporated
DMS3014SFG
Document number: DS35594 Rev. 6 - 2
1 of 8 www.diodes.com
May 2012
© Diodes Incorporated
ADVANCE INFORMATION YYWW
Marking Information
DMS3014SFG
S29 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 11 = 2011) S29 WW = Week code (01 ~ 53)
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Steady State
t<10s
Continuous Drain Current (Note 6) VGS = 4.5V
Steady State
t<10s
Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current (Note 7) L = 0.1mH Repetitive Avalanche Energy (Note 7) L = 0.1mH
TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C
Symbol VDSS VGSS ID
ID
ID
ID IDM IS IAR EAR
Value 30 ±12
9.5 7.6
13.0 9.7
9.0 7.4
12.2 9.3
80 3.0 30 45
Units V V A
A
A
A A A A mJ
Thermal Characteristics @TA = 25°C unless otherwise specified
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range
Steady state t<10s
Steady state t<10s
Symbol PD
RθJA PD
RθJA
RθJC TJ, TSTG
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
Value 1
131 72 2.1 63 35 7.1
-55 to +150
Units W
°C/W °C/W
W °C/W °C/W °C/W
°C
POWERDI is a registered trademark of Diodes Incorporated
DMS3014SFG
Document number: DS35594 Rev. 6 - 2
2 of 8 www.diodes.com
May 2012
© Diodes Incorporated
-ID, DRAIN CURRENT (A)
ADVANCE INFORMATION
DMS3014SFG
100
RDS(on) Limited
10
PW = 10µs
DC
1
PW = 10s PW = 1s
PW = 100ms
PW = 10ms
PW = 1ms
0.1 PW = 100µs
TJ(max) = 150°C TA = 25°C Single Pulse
0.01 0.1
1 10 -VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 SOA, Safe Operation Area
1
D = 0.9 D = 0.7 D = 0.5
D = 0.3
100
0.1
D = 0.1
D = 0.05
P(PK), PEAK TRANSIENT POIWER (W)
100 90 80 70 60
Single Pulse
RθJA = 61°C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t)
50
40
30
20
10
0 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec) Fig. 2 Single Pulse Maximum Power Dissipation
r(t), TRANSIENT THE.