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DMS3014SFG Dataheets PDF



Part Number DMS3014SFG
Manufacturers Diodes Incorporated
Logo Diodes Incorporated
Description 30V N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet DMS3014SFG DatasheetDMS3014SFG Datasheet (PDF)

ADVANCE INFORMATION DMS3014SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 30V RDS(ON) max 13mΩ @ VGS = 10V 14mΩ @ VGS = 4.5V ID max TA = 25°C 9.5A 9.0A Features and Benefits • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(ON) – minimize conduction losses • Low VSD – reducing the losses due to body diode conduction • Low Qrr – lower Qrr of the integrated Schottky reduces body d.

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ADVANCE INFORMATION DMS3014SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 30V RDS(ON) max 13mΩ @ VGS = 10V 14mΩ @ VGS = 4.5V ID max TA = 25°C 9.5A 9.0A Features and Benefits • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(ON) – minimize conduction losses • Low VSD – reducing the losses due to body diode conduction • Low Qrr – lower Qrr of the integrated Schottky reduces body diode switching losses • Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot- through or cross conduction currents at high frequencies • Small form factor thermally efficient package enables higher density end products • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product • 100% UIS (Avalanche) rated • 100% Rg tested • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Backlighting • Power Management Functions • DC-DC Converters Mechanical Data • Case: POWERDI3333-8 • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections Indicator: See diagram • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Weight: 0.072 grams (approximate) Top View S Pin 1 S S G D D D D Bottom View 8765 Drain 123 4 Top View Pin Configuration Gate Source Internal Schematic Ordering Information (Note 4) Notes: Part Number DMS3014SFG-7 DMS3014SFG-13 Case POWERDI3333-8 POWERDI3333-8 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.  3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. POWERDI is a registered trademark of Diodes Incorporated DMS3014SFG Document number: DS35594 Rev. 6 - 2 1 of 8 www.diodes.com May 2012 © Diodes Incorporated ADVANCE INFORMATION YYWW Marking Information DMS3014SFG S29 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 11 = 2011) S29 WW = Week code (01 ~ 53) Maximum Ratings @TA = 25°C unless otherwise specified Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current (Note 6) VGS = 10V Steady State t<10s Continuous Drain Current (Note 6) VGS = 4.5V Steady State t<10s Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current (Note 7) L = 0.1mH Repetitive Avalanche Energy (Note 7) L = 0.1mH TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Symbol VDSS VGSS ID ID ID ID IDM IS IAR EAR Value 30 ±12 9.5 7.6 13.0 9.7 9.0 7.4 12.2 9.3 80 3.0 30 45 Units V V A A A A A A A mJ Thermal Characteristics @TA = 25°C unless otherwise specified Total Power Dissipation (Note 5) Characteristic Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Steady state t<10s Steady state t<10s Symbol PD RθJA PD RθJA RθJC TJ, TSTG Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C Value 1 131 72 2.1 63 35 7.1 -55 to +150 Units W °C/W °C/W W °C/W °C/W °C/W °C POWERDI is a registered trademark of Diodes Incorporated DMS3014SFG Document number: DS35594 Rev. 6 - 2 2 of 8 www.diodes.com May 2012 © Diodes Incorporated -ID, DRAIN CURRENT (A) ADVANCE INFORMATION DMS3014SFG 100 RDS(on) Limited 10 PW = 10µs DC 1 PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 PW = 100µs TJ(max) = 150°C TA = 25°C Single Pulse 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 SOA, Safe Operation Area 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 100 0.1 D = 0.1 D = 0.05 P(PK), PEAK TRANSIENT POIWER (W) 100 90 80 70 60 Single Pulse RθJA = 61°C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t) 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 2 Single Pulse Maximum Power Dissipation r(t), TRANSIENT THE.


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