DMS3014SFG

ADVANCE INFORMATION DMS3014SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 30V RDS(ON) max 13mΩ @ VGS = 10V 14mΩ @ VGS = 4.5V ID max TA = 25°C 9.5A 9.0A Features and Benefits DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: Low RDS(ON) – minimize conduction losses Low VSD – reducing the losses due to body diode conduction Low Qrr – lower Qrr of the integrated Schottky reduces body diode switching losses Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot- through or cross conduction currents at high frequencies Small form factor thermally efficient package enables higher density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product 100% UIS (Avalanche) rated 100% Rg tested Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Backlighting Power Management Functions DC-DC Converters Mechanical Data Case: POWERDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Term...