CHA3395-QDG

CHA3395-QDG 21-29.5GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3395-QDG is a 3 stage monolithic medium power amplifier, which produces 24dB gain for 20dBm output power. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. UMS AA3363689785A YYYYWWWWG Main Features ■ Broadband performances: 21-29.5GHz ■ 20dBm Pout at 1dB compression ■ 24dB gain ■ 32dBm OTOI ■ DC bias: Vd= 4.0V, Id= 180mA ■ 24L-QFN4x4 (QDG) ■ MSL1 Output Power (dBm), PAE (%) Output Power & PAE versus Frequency 30 28 26 24 22 20 18 16 14 12 Psat P-1dB PAE sat 10 19 20 21 22 23 24 25 26 27 28 29 30 Frequency (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain P-1dB Output Power @1dB comp. OTOI 3rd order Intercept point Min Typ Max Unit 21.0 29.5 GHz 24 dB 20 dBm 32 dBm Ref. : DSCHA3395-QDG5090 - 31 Mar 15 1/16 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3395-QDG 21-29.5GHz Medium Power Amplifier Electrical Characteristics Tamb.= +25°C, Vd = +4.0V Sy...