LDAN202UT1G

LESHAN RADIO COMPANY, LTD. Dual Serise Switching Diodes FEATURES Ultra high speed switching Suitable for high packing density layout. High reliability. We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION Device LDAN202UT1G S- LDAN202UT1G LDAN202UT3G S- LDAN202UT3G Marking N N Shipping 3000/Tape&Reel 10000/Tape&Reel MAXIMUM RATINGS (Each Diode) Rating Symbol Reverse Voltag Forward Current Peak Forward Surge Current Forward voltage(If = 100mA ) Reverse current (Vr = 70V ) VR Io IFM(surge) VF IR Capacitance between terminals(f =1MHz) Reverse recovery time(Vr= 6V,If=5 mA) CT Trr Value 80 100 300 1.2 0.1 3.5 4 Unit Vdc mAdc mAdc V uA pF nS LDAN202UT1G S-LDAN202UT1G 3 1 2 SC-70 ANODE 1 ANODE 2 3 CATHODE POWER DISSIPATION : Pd / Pd Max.(%) FORWARD CURRENT : IF (mA) REVERSE CURRENT : IR (nA) ELECTRICAL CHARACTERISTIC CURVES 125 50 100 75 50 25 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE :Ta (ºC) Fig.1 Power attenuation curve 20 10 5 Ta=85ºC 2 50ºC 25ºC 1 0ºC −30ºC 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE : VF (V) Fig.2 Forward characteristics (P Type) 1000 Ta=100ºC 100 75ºC 10 50ºC 25ºC 1 0ºC −25ºC 0.1 0.01 0 10 20 30 40 REVERSE VOLTAGE : VR (V) 50 Fig.3 Reverse characteristics (P Type) Rev.O 1/3 FORWARD CURRENT : IF (mA) L...