Dual Serise Switching Diodes
LESHAN RADIO COMPANY, LTD.
Dual Serise Switching Diodes
FEATURES
• Ultra high speed switching • Suitable for high pack...
Description
LESHAN RADIO COMPANY, LTD.
Dual Serise Switching Diodes
FEATURES
Ultra high speed switching Suitable for high packing density layout. High reliability. We declare that the material of product
compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
LDAN202UT1G S- LDAN202UT1G
LDAN202UT3G S- LDAN202UT3G
Marking N
N
Shipping 3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS (Each Diode)
Rating
Symbol
Reverse Voltag Forward Current Peak Forward Surge Current Forward voltage(If = 100mA ) Reverse current (Vr = 70V )
VR Io IFM(surge) VF IR
Capacitance between terminals(f =1MHz) Reverse recovery time(Vr= 6V,If=5 mA)
CT Trr
Value 80 100 300 1.2 0.1
3.5 4
Unit Vdc mAdc mAdc V uA
pF nS
LDAN202UT1G S-LDAN202UT1G
3
1 2
SC-70
ANODE 1
ANODE 2
3 CATHODE
POWER DISSIPATION : Pd / Pd Max.(%) FORWARD CURRENT : IF (mA) REVERSE CURRENT : IR (nA)
ELECTRICAL CHARACTERISTIC CURVES
125 50
100
75
50
25
0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE :Ta (ºC)
Fig.1 Power attenuation curve
20
10
5 Ta=85ºC
2 50ºC 25ºC
1 0ºC −30ºC
0.5
0.2
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE : VF (V)
Fig.2 Forward characteristics (P Type)
1000 Ta=100ºC
100 75ºC
10 50ºC 25ºC
1 0ºC −25ºC
0.1
0.01 0
10 20 30 40 REVERSE VOLTAGE : VR (V)
50
Fig.3 Reverse characteristics (P Type)
Rev.O 1/3
FORWARD CURRENT : IF (mA)
L...
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