LM1MA141KT1G

LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications. LM1MA141KT1G S-LM1MA141KT1G LM1MA142KT1G z Fast trr, < 3.0 ns z Low Crr , < 2.0 pF z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION S-LM1MA142KT1G SC–70/SOT–323 PACKAGE SINGLE SILICON SWITCHING DIODE 40/80 V–100 mA SURFACE MOUNT Device Package Shipping 3 LM1MA141KT1G LM1MA141KT3G SOT-323/SC-70 SOT-323/SC-70 3000/Tape&Reel 10000/Tape&Reel 1 2 LM1MA142KT1G SOT-323/SC-70 3000/Tape&Reel SC – 70 LM1MA142KT3G SOT-323/SC-70 10000/Tape&Reel DEVICE MARKING LM1MA141KT1G = MH LM1MA142KT1G=MI MAXIMUM RATINGS (TA = 25°C) Rating Symbol Reverse Voltage LM1MA141KT1G LM1MA142KT1G VR Peak Reverse Voltage LM1MA141KT1G LM1MA142KT1G VRM Forward Current IF Peak Forward Current Peak Forward Surge Current IFM I (1) FSM Value 40 80 40 80 100 225 500 THERMAL CHARACTERISTICS Rating Symbol Max Power Dissipation Junction Temperature Storage Temperature PD 150 TJ 150 Tstg –55 ~ +150 ELECTRICAL CHARACTERISTICS (TA= 25°C) Characteristic Symbol Reverse Voltage Leakage Current LM1MA141KT1G LM1MA142KT1...